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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1051 DESCRIPTION *With TO-3 package *High transition frequency *Excellent safe operating area APPLICATIONS *For audio and general purpose power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -15 -1.5 150 175 -55~200 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SA1051 SYMBOL TYP. MAX UNIT V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Collector-emitter breakdown voltage IC=-25mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-10A; IB=-1A IC=-8A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-8A ; VCE=-5V IC=-1A ; VCE=-10V -150 V Collector-base breakdown voltage -150 V Emitter-base breakdown voltage -5 V Collector-emitter saturation voltage -3.0 V Base-emitter on voltage -1.5 V Collector cut-off current -10 A Emitter cut-off current -10 A DC current gain 55 160 DC current gain 35 Transition frequency 60 MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1051 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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